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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1875 DESCRIPTION With TO-3 package High voltage ,high speed APPLICATIONS Designed for use in large screen color deflection circuits PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-3) and symbol DESCRIPTION Absolute maximum ratings(Ta=ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg Collector-base voltage PARAMETER CONDITIONS ANG INCH Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature Collector-emitter voltage EMIC ES Open base Open collector Open emitter DUC ON VALUE 1500 500 6 3.5 10 1.0 TOR UNIT V V V A A A W ae ae TC=25ae 50 150 -65~150 THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction case MAX 2.5 UNIT ae /W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN 2SC1875 SYMBOL TYP. MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ;IB=0 500 V VCEsat VBEsat Collector-emitter saturation voltage IC=2.5A; IB=0.6A IC=2.5A; IB=0.6A 10 V Base-emitter saturation voltage 1.2 V ICES Collector cut-off current VCE=1500V; VBE=0 1.0 mA ICBO Collector cut-off current VCB=1000V; IE=0 20 |I A IEBO Emitter cut-off current VEB=5V; IC=0 20 |I A hFE-1 DC current gain hFE-2 ts DC current gain Storage time ANG CH IC=0.5A ; VCE=10V 10 35 IC=2A ; VCE=10V 5 tf Fall time IN EMIC ES IC=2.5A ; IB1=-IB2=0.6A Pw=20|I s OND TOR UC 25 10 |I 1.0 |I s s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC1875 SEM GE HAN INC OND IC TOR UC Fig.2 outline dimensions (unindicated tolerance:A 0.1mm) 3 |
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